| PART |
Description |
Maker |
| TQM7M9053 |
Quad band GSM-EDGE and Tri-Band W/CDMA/HSPA /LTE
|
TriQuint Semiconductor
|
| AWT6310R AWT6310RM23Q7 |
Dual-band CDMA/PCS 3.4 V/28 dBm Linear Power Amplifier Module
|
ANADIGICS[ANADIGICS, Inc]
|
| QCPM-9804 |
PCS / CDMA / AMPS Dual-Band Tri-Mode Power Amplifier Module
|
Agilent Technologies
|
| QCPM-9804 |
PCS / CDMA / AMPS Dual-Band Tri-Mode Power Amplifier Module
|
Agilent (Hewlett-Packard)
|
| AWC6323 |
HELP3E Dual-band Cellular & PCS CDMA 3.4 V Linear Power Amplifer Module
|
Anadigics
|
| MJE2955T03 MJE34003 MJE52103 MJE585203 MJE80203 MR |
COMPLEMENTARY SILICON POWER TRANSISTORS
COMPLEMETARY SILICON POWER TRANSISTORS
SILICON NPN TRANSISTOR
HIGH VOLTAGE PNP POWER TRANSISTOR
SILICON NPN POWER DARLINGTON TRANSISTOR
RF Power Field Effect Transistors
880 MHz, 40 W AVG. 26 V SINGLE N-CDMA N-Channel Enhancement-Mode Lateral MOSFETs
RF LDMOS Wideband Integrated Power Amplifiers
GENERAL PURPOSE L TO X-BAND GaAs MESFET
10 A, 60 V, PNP, Si, POWER TRANSISTOR, TO-220AB
|
FREESCALE
NEC
STMICROELECTRONICS[STMicroelectronics]
|
| MRF5S19090LSR3 MRF5S19090LR3 |
L BAND, Si, N-CHANNEL, RF POWER, MOSFET
1990 MHz, 18 W AVG 2 x N-CDMA, 28 V LATERAL N-CHANNEL RF POWER MOSFETs
|
FREESCALE SEMICONDUCTOR INC
MOTOROLA[Motorola, Inc]
|
| MRF5P21240R6 MRF5P21240 |
RF POWER FIELD EFFECT TRANSISTOR 2 CHANNEL, S BAND, Si, N-CHANNEL, RF POWER, MOSFET
MRF5P21240R6 2170 MHz, 52 W Avg., 2 x W-CDMA, 28 V Lateral N-Channel RF Power MOSFET
2170 MHz, 52 W Avg., 2 x W–CDMA, 28 V Lateral N–Channel RF Power MOSFET
|
Motorola Mobility Holdings, Inc.
MOTOROLA[Motorola, Inc]
Freescale (Motorola)
|
| AWC6344Q7 AWC6344P9 |
HELP CDMA AWS/KPCS CDMA Power Amplifier Module
|
ANADIGICS, Inc
|
| T0372NBSP |
3-V CDMA/AMPS power-amplifier module 4mm x 4mm for cell band.
|
Atmel Corp
|
